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Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit: mm s Features q q q 2.10.1 0.425 1.250.1 0.425 Allowing the small current and low voltage operation. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.00.2 1.30.1 0.65 3 2 0.90.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 10 7 2 10 50 150 -55 ~ +150 Unit V V V mA mW C C 0.70.1 0 to 0.1 0.20.1 1:Base 2:Emitter 3:Collector EIAJ:SC-70 S-Mini Type Package Marking symbol : 2X s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25C) Symbol ICBO IEBO hFE fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 1.5V, IC = 0 VCE = 1V, IC = 1mA VCE = 1V, IC = 1mA, f = 800MHz VCB = 1V, IE = 0, f = 1MHz VCE = 1V, IC = 1mA, f = 800MHz VCE = 1V, IC = 1mA, f = 800MHz VCE = 1V, IC = 1mA, f = 800MHz 50 4 0.4 6.0 15 3.5 min typ max 1 1 200 GHz pF dB dB dB Unit A A Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure. 0.15-0.05 +0.1 s Absolute Maximum Ratings (Ta=25C) 0.2 0.3-0 +0.1 1 Transistor PC -- Ta 80 6 Ta=25C 70 5 IB=50A 45A 40A 4 35A 30A 3 25A 20A 2 15A 10A 1 10 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 2.4 5A 50 2SC4410 IC -- VCE 60 VCE=1V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 60 50 40 30 20 Collector current IC (mA) 40 25C Ta=75C 30 -25C 20 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.1 25C -25C IC/IB=10 240 hFE -- IC 12 VCE=1V fT -- IC VCE=1V f=800MHz Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (GHz) 10 30 100 10 160 Ta=75C 120 25C 80 -25C 40 8 6 4 2 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C GUM -- IC Maximum unilateral power gain GUM (dB) 24 VCE=1V f=800MHz Ta=25C 6 NF -- IC VCE=1V (Rg=50) f=800MHz Ta=25C 1.2 1.0 20 5 0.8 16 Noise figure NF (dB) 0.3 1 3 10 30 100 4 0.6 12 3 0.4 8 2 0.2 4 1 0 0.1 0.3 1 3 10 30 100 0 0.1 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Emitter current IE (mA) 2 |
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